Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US13600190Application Date: 2012-08-30
-
Publication No.: US08698231B2Publication Date: 2014-04-15
- Inventor: Ki Hong Lee , Seung Ho Pyi , Jin Ho Bin
- Applicant: Ki Hong Lee , Seung Ho Pyi , Jin Ho Bin
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2012-0013320 20120209
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/78
Abstract:
A semiconductor device includes vertical channel layers, a pipe channel layer coupling bottoms of the vertical channel layers, a pipe gate contacting a bottom surface and side surfaces of the pipe channel layer, and a dummy pipe gate formed of a non-conductive material and contacting a top surface of the pipe channel layer.
Public/Granted literature
- US20130207182A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-08-15
Information query
IPC分类:
