Provided are an image sensor and a package including the same. The image sensor may include an interconnection layer comprising a plurality of interconnections that are vertically stacked, a light penetration layer including color filters and microlenses, a semiconductor layer disposed between the interconnection layer and the light penetration layer and including photoelectrical transformation elements and a light shielding pattern disposed between the light penetration layer and the semiconductor layer. A surface of the semiconductor layer adjacent to the light penetration layer defines a recess region recessed toward the interconnection layer. The light shielding pattern is formed in the recess region and at least one of the photoelectrical transformation elements is formed in the semiconductor layer between the light shielding pattern and the interconnection layer.