Invention Grant
US08698277B2 Nonvolatile variable resistance device having metal halogen or metal sulfide layer
有权
具有金属卤素或金属硫化物层的非挥发性可变电阻器件
- Patent Title: Nonvolatile variable resistance device having metal halogen or metal sulfide layer
- Patent Title (中): 具有金属卤素或金属硫化物层的非挥发性可变电阻器件
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Application No.: US13233623Application Date: 2011-09-15
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Publication No.: US08698277B2Publication Date: 2014-04-15
- Inventor: Takashi Yamauchi , Shosuke Fujii , Reika Ichihara
- Applicant: Takashi Yamauchi , Shosuke Fujii , Reika Ichihara
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-029540 20110215
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L29/00 ; H01L47/00 ; H01L29/02 ; H01L29/04 ; H01L29/06 ; G11C11/00
Abstract:
According to one embodiment, a nonvolatile variable resistance device includes a first electrode, a second electrode, a first layer, and a second layer. The second electrode includes a metal element. The first layer is arranged between the first electrode and the second electrode and includes a semiconductor element. The second layer is inserted between the second electrode and the first layer and includes the semiconductor element. The percentage of the semiconductor element being unterminated is higher in the second layer than in the first layer.
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