Invention Grant
- Patent Title: High-frequency switch
- Patent Title (中): 高频开关
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Application No.: US13046937Application Date: 2011-03-14
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Publication No.: US08698574B2Publication Date: 2014-04-15
- Inventor: Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
- Applicant: Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2010-179959 20100811
- Main IPC: H01P1/10
- IPC: H01P1/10 ; H01P1/15

Abstract:
According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section.
Public/Granted literature
- US20120038411A1 HIGH-FREQUENCY SWITCH Public/Granted day:2012-02-16
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