Invention Grant
- Patent Title: Three-dimensional writable printed memory
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Application No.: US13599112Application Date: 2012-08-30
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Publication No.: US08699257B2Publication Date: 2014-04-15
- Inventor: Guobiao Zhang
- Applicant: Guobiao Zhang
- Applicant Address: CN HangZhou, ZheJiang US OR Corvallis
- Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee Address: CN HangZhou, ZheJiang US OR Corvallis
- Main IPC: G11C17/06
- IPC: G11C17/06 ; G11C5/02 ; G11C17/00 ; H01L23/52

Abstract:
The present invention discloses a three-dimensional writable printed memory (3D-wP). It comprises at least a printed memory array and a writable memory array. The printed memory array stores contents data, which are recorded with a printing means; the writable memory array stores custom data, which are recorded with a writing means. The writing means is preferably direct-write lithography. To maintain manufacturing throughput, the total amount of custom data should be less than 1% of the total amount of content data.
Public/Granted literature
- US20130058147A1 Three-Dimensional Writable Printed Memory Public/Granted day:2013-03-07
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