Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13067675Application Date: 2011-06-20
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Publication No.: US08699286B2Publication Date: 2014-04-15
- Inventor: Toru Ishikawa
- Applicant: Toru Ishikawa
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-144367 20100625
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor device is provided with: a delay circuit including a first delay unit that has a plurality of differential first delay elements which are respectively connected in series, a plurality pairs of first contacts which are respectively provided between the plurality of first delay elements, and a first output circuit that outputs a first delayed signal corresponding to a pair of first contacts selected from among the plurality pairs of first contacts, on receiving a first selection signal; a second delay unit that receives the first delayed signal, and that includes a plurality of single-ended second delay elements which are respectively connected in series, a plurality of second contacts which are respectively provided between the plurality of second delay elements, and a second output circuit that outputs a second delayed signal corresponding to a second contact selected from among the plurality of second contacts, on receiving a second selection signal; and a control circuit that outputs each of the first and second selection signals.
Public/Granted literature
- US20110317503A1 Semiconductor device Public/Granted day:2011-12-29
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