Invention Grant
- Patent Title: Photonic crystal surface emitting laser and method of manufacturing the same
- Patent Title (中): 光子晶体发射激光器及其制造方法
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Application No.: US13482025Application Date: 2012-05-29
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Publication No.: US08699539B2Publication Date: 2014-04-15
- Inventor: Aihiko Numata
- Applicant: Aihiko Numata
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2011-137481 20110621
- Main IPC: H01S5/183
- IPC: H01S5/183

Abstract:
A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high and a low refractive index portion in an in-plane direction. The band gaps of the plurality of layers are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers. A third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer.
Public/Granted literature
- US20120327966A1 PHOTONIC CRYSTAL SURFACE EMITTING LASER AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-12-27
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