Invention Grant
- Patent Title: AlxGa1-xN crystal substrate
- Patent Title (中): Al x Ga 1-x N晶体衬底
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Application No.: US13621854Application Date: 2012-09-18
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Publication No.: US08702865B2Publication Date: 2014-04-22
- Inventor: Michimasa Miyanaga , Naho Mizuhara , Hideaki Nakahata
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agent James W. Judge
- Priority: JP2006-170302 20060620
- Main IPC: C30B23/00
- IPC: C30B23/00 ; H01L31/036 ; H01B1/02
Abstract:
Affords AlxGa1-xN crystal growth methods, as well as AlxGa1-xN crystal substrates, wherein bulk, low-dislocation-density crystals are obtained. The AlxGa1-xN crystal (0
Public/Granted literature
- US20130015414A1 AlxGa1-xN Crystal Substrate Public/Granted day:2013-01-17
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