Invention Grant
- Patent Title: Selective etching of semiconductor substrate(s) that preserves underlying dielectric layers
- Patent Title (中): 选择性蚀刻保留下面介电层的半导体衬底
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Application No.: US12763635Application Date: 2010-04-20
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Publication No.: US08703003B2Publication Date: 2014-04-22
- Inventor: Kyle S. Lebouitz , David L. Springer , John J. Neumann, Jr.
- Applicant: Kyle S. Lebouitz , David L. Springer , John J. Neumann, Jr.
- Applicant Address: GB Newport
- Assignee: SPTS Technologies Limited
- Current Assignee: SPTS Technologies Limited
- Current Assignee Address: GB Newport
- Agency: McNees Wallace & Nurick LLC
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00
Abstract:
In a method of vapor etching, a sample that includes a first layer atop of and in contact with a second layer which is atop of and in contact with a third layer, wherein at least the first and second layers are comprised of different materials. The sample is etched by a vapor etchant under first process conditions that cause at least a part of the first layer to be fully removed while leaving the third layer and the second layer underlying the removed part of the first layer substantially unetched. The sample is then etched by the same or a different vapor etchant under second process conditions that cause at least the part of the second layer exposed by the removal of the at least part of the first layer to be fully removed while leaving the third layer underlying the removed part of the second layer substantially unetched.
Public/Granted literature
- US20100267242A1 Selective Etching Of Semiconductor Substrate(s) That Preserves Underlying Dielectric Layers Public/Granted day:2010-10-21
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