中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US08703237B2 Methods of forming a material layer and methods of fabricating a memory device 有权
形成材料层的方法和制造存储器件的方法

Methods of forming a material layer and methods of fabricating a memory device
Abstract:
Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.
Abstract(Chinese):

提供了通过化学吸附金属原子到其表面上形成有阴离子的基板来形成材料层的方法，以及通过使用材料层形成方法制造存储器件的方法。 因此，具有小直径的通孔可以填充材料层而不形成空隙或接缝。 因此，可以获得可靠的存储器件。

Public/Granted literature
Information query
Espacenet
Patent Agency Ranking
0/0