Invention Grant
- Patent Title: Polycrystalline silicon reactor
- Patent Title (中): 多晶硅反应器
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Application No.: US12406335Application Date: 2009-03-18
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Publication No.: US08703248B2Publication Date: 2014-04-22
- Inventor: Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
- Applicant: Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Materials Corporation
- Current Assignee: Mitsubishi Materials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Edwards Wildman Palmer LLP
- Priority: JP2008-074469 20080321
- Main IPC: B05D5/06
- IPC: B05D5/06 ; C23C16/00

Abstract:
A polycrystalline silicon reactor which can prevent polycrystalline silicon which deposits on the surface of an electrode holding a silicon seed rod from being peeled off is provided. In a polycrystalline silicon reactor which applies an electric current to a silicon seed rod provided within a furnace, thereby heating the silicon seed rod, brings a source gas supplied into the furnace into reaction, and deposits polycrystalline silicon on the surface of the silicon seed rod, the reactor includes, at a bottom plate of the furnace, an electrode holder provided so as to be electrically insulated from the bottom plate, and a seed rod holding electrode connected to the electrode holder, and holding the silicon seed rod toward the upside. Concavo-convex portions exposed to a furnace atmosphere is provided at an outer peripheral surface of the seed rod holding electrode.
Public/Granted literature
- US20090238992A1 POLYCRYSTALLINE SILICON REACTOR Public/Granted day:2009-09-24
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