Invention Grant
- Patent Title: Method for repairing photomask
- Patent Title (中): 修复光掩模的方法
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Application No.: US13465266Application Date: 2012-05-07
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Publication No.: US08703364B2Publication Date: 2014-04-22
- Inventor: Kun-Lung Hsieh , Chung-Hung Lin , Min-An Yang , Chih Wei Wen , Wu Hung Ko
- Applicant: Kun-Lung Hsieh , Chung-Hung Lin , Min-An Yang , Chih Wei Wen , Wu Hung Ko
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/72
- IPC: G03F1/72

Abstract:
A method for repairing a defect, such as a pinhole, on a photomask is described. In an example, a laser beam is used to form a matrix of laser burn spots in a substrate of the photomask proximate a defect, such as a pinhole, of the photomask. Each laser burn spot is formed at a focal point of the laser beam inside the substrate by melting a material of the substrate proximate to the defect. In an example, the defect is surrounded and covered by the matrix of laser burn spots. The matrix of laser burn spots can attenuate or block light from passing through the defect, such as the pinhole. The matrix of laser burn spots may repair the defect of the photomask without removing a pellicle and pellicle frame mounted on the photomask.
Public/Granted literature
- US20130295494A1 METHOD FOR REPAIRING PHOTOMASK Public/Granted day:2013-11-07
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