Invention Grant
- Patent Title: Pattern formation method
- Patent Title (中): 图案形成方法
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Application No.: US13188027Application Date: 2011-07-21
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Publication No.: US08703407B2Publication Date: 2014-04-22
- Inventor: Yuriko Seino , Yukiko Kikuchi
- Applicant: Yuriko Seino , Yukiko Kikuchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2010-199642 20100907
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
According to one embodiment, a pattern formation method contains: forming first guides by changing a surface energy of an underlayer material by transferring a pattern of a photomask onto the underlayer material by exposure, and forming second guides by changing the surface energy of the underlayer material between the first guides by diffraction of exposure light generated from the exposure; applying a block copolymer containing a plurality of types of polymer block chains onto the underlayer material; and causing any one of the polymer block chains to form a pattern in accordance with the first and second guides by microphase separation of the block copolymer by a heat treatment.
Public/Granted literature
- US20120058435A1 PATTERN FORMATION METHOD Public/Granted day:2012-03-08
Information query
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