Invention Grant
- Patent Title: Photovoltaic devices including copper indium gallium selenide
- Patent Title (中): 光电器件包括铜铟镓硒
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Application No.: US12623364Application Date: 2009-11-20
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Publication No.: US08703527B2Publication Date: 2014-04-22
- Inventor: David Eaglesham
- Applicant: David Eaglesham
- Applicant Address: US OH Perrysburg
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US OH Perrysburg
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A copper indium gallium selenide photovoltaic cell can include a substrate having a transparent conductive oxide layer. The copper indium gallium selenide can be deposited using sputtering and vapor transport deposition.
Public/Granted literature
- US20100186812A1 PHOTOVOLTAIC DEVICES INCLUDING COPPER INDIUM GALLIUM SELENIDE Public/Granted day:2010-07-29
Information query
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