Invention Grant
- Patent Title: Activation treatments in plating processes
- Patent Title (中): 电镀工艺中的激活处理
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Application No.: US12784314Application Date: 2010-05-20
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Publication No.: US08703546B2Publication Date: 2014-04-22
- Inventor: Chih-Wei Lin , Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu
- Applicant: Chih-Wei Lin , Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/288
Abstract:
A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.
Public/Granted literature
- US20110287628A1 Activation Treatments in Plating Processes Public/Granted day:2011-11-24
Information query
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