Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
- Patent Title (中): 等离子体处理装置和等离子体处理方法
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Application No.: US13582557Application Date: 2011-05-11
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Publication No.: US08703613B2Publication Date: 2014-04-22
- Inventor: Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
- Applicant: Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2010-110743 20100513; JP2010-196387 20100902; JP2011-039787 20110225
- International Application: PCT/JP2011/002609 WO 20110511
- International Announcement: WO2011/142125 WO 20111117
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L27/14

Abstract:
A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.
Public/Granted literature
- US20120325777A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2012-12-27
Information query
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