Invention Grant
- Patent Title: Light emitting device and manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US13672861Application Date: 2012-11-09
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Publication No.: US08704243B2Publication Date: 2014-04-22
- Inventor: Shunpei Yamazaki , Takeshi Noda , Yoshinari Higaki
- Applicant: Shunpei Yamazaki , Takeshi Noda
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2002-167758 20020607
- Main IPC: H01L27/15
- IPC: H01L27/15

Abstract:
Disclosed is a light emission element including, on a substrate having an insulative surface, a first electrode connected with a thin film transistor and an insulator covering the end of the first electrode, a layer containing, an organic compound in contact with the first electrode, a second electrode in contact with the layer containing the organic compound. The first electrode has an inclined surface and the inclined surface reflects emitted light from the layer containing the organic compound. Further, a light absorbing multi-layered film absorbing external light is disposed on the portion of the first electrode covered with the insulator. The light absorbing multi-layered film comprising at least has a three-layered structure comprising a light transmitting film, a film partially absorbing light and a light transmitting film.
Public/Granted literature
- US20130140536A1 Light Emitting Device and Manufacturing Method Thereof Public/Granted day:2013-06-06
Information query
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