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US08704277B2 Spectrally efficient photodiode for backside illuminated sensor 有权
背光照明传感器的光谱高效光电二极管

Spectrally efficient photodiode for backside illuminated sensor
Abstract:
A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface and a plurality of pixels formed on the front surface of the semiconductor substrate. A dielectric layer is disposed above the front surface of the semiconductor substrate. The sensor further includes a plurality of array regions arranged according to the plurality of pixels. At least two of the array regions have a different radiation response characteristic from each other, such as the first array region having a greater junction depth than the second array region, or the first array region having a greater dopant concentration than the second array region.
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