Invention Grant
- Patent Title: Spectrally efficient photodiode for backside illuminated sensor
- Patent Title (中): 背光照明传感器的光谱高效光电二极管
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Application No.: US11624568Application Date: 2007-01-18
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Publication No.: US08704277B2Publication Date: 2014-04-22
- Inventor: Tzu-Hsuan Hsu , Dun-Nian Yaung
- Applicant: Tzu-Hsuan Hsu , Dun-Nian Yaung
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface and a plurality of pixels formed on the front surface of the semiconductor substrate. A dielectric layer is disposed above the front surface of the semiconductor substrate. The sensor further includes a plurality of array regions arranged according to the plurality of pixels. At least two of the array regions have a different radiation response characteristic from each other, such as the first array region having a greater junction depth than the second array region, or the first array region having a greater dopant concentration than the second array region.
Public/Granted literature
- US20070262354A1 Spectrally Efficient Photodiode For Backside Illuminated Sensor Public/Granted day:2007-11-15
Information query
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