Invention Grant
- Patent Title: Semiconductor devices
- Patent Title (中): 半导体器件
-
Application No.: US12724450Application Date: 2010-03-16
-
Publication No.: US08704283B2Publication Date: 2014-04-22
- Inventor: Jong-Kyu Kim , Sang-Sup Jeong , Sung-Gil Choi , Heung-Sik Park , Kuk-Han Yoon , Yong-Joon Choi
- Applicant: Jong-Kyu Kim , Sang-Sup Jeong , Sung-Gil Choi , Heung-Sik Park , Kuk-Han Yoon , Yong-Joon Choi
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0022605 20090317
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
A semiconductor device includes a lower electrode, a supporting member enclosing at least an upper portion of the lower electrode, a dielectric layer on the lower electrode and the supporting member, and an upper electrode disposed on the dielectric layer. The supporting member may have a first portion that extends over an upper part of the sidewall of the lower electrode, and a second portion covering the upper surface of the lower electrode. The first portion of the supporting member protrudes above the lower electrode.
Public/Granted literature
- US20100237466A1 SEMICONDUCTOR DEVICES Public/Granted day:2010-09-23
Information query
IPC分类: