Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US13602792Application Date: 2012-09-04
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Publication No.: US08704289B2Publication Date: 2014-04-22
- Inventor: Yasuhiro Shimura
- Applicant: Yasuhiro Shimura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-286515 20111227; JP2011-287855 20111228
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/788
Abstract:
According to one embodiment, a nonvolatile semiconductor memory includes a gate insulating film, a floating gate, first and second silicon oxide films, an insulating film and a control gate. The floating gate is formed on the gate insulating film. The first silicon oxide film is formed on an upper surface of the floating gate. The insulating film is formed on the first silicon oxide film on the upper surface of the floating gate and has a dielectric constant higher than that of the silicon oxide film. The second silicon oxide film is formed on the insulating film on the upper surface of the floating gate and on a side surface of the floating gate. The control gate is formed on the second silicon oxide film formed on the upper and side surfaces of the floating gate.
Public/Granted literature
- US20130234225A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-09-12
Information query
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