Selective removal of on-die redistribution interconnect material from a scribe-line region is generally described. In one example, an apparatus includes a first semiconductor die having a redistribution layer comprising redistribution dielectric and one or more redistribution metal interconnects, a second semiconductor die coupled with the first semiconductor die, the second semiconductor die having a redistribution layer comprising redistribution dielectric and one or more redistribution metal interconnects, and a scribe-line region disposed between the first semiconductor die and second semiconductor die, the scribe-line region having a majority or substantially all of redistribution dielectric or redistribution metal, or suitable combinations thereof, selectively removed to enable die singulation through the scribe-line region.