Invention Grant
- Patent Title: Semiconductor device comprising through-electrode interconnect
- Patent Title (中): 半导体器件包括贯通电极互连
-
Application No.: US13649523Application Date: 2012-10-11
-
Publication No.: US08704355B2Publication Date: 2014-04-22
- Inventor: Masaya Kawano
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2004-108304 20040331
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device having a through electrode excellent in performance as for an electrode and manufacturing stability is provided. There is provided a through electrode composed of a conductive small diameter plug and a conductive large diameter plug on a semiconductor device. A cross sectional area of the small diameter plug is made larger than a cross sectional area and a diameter of a connection plug, and is made smaller than a cross sectional area and a diameter of the large diameter plug. In addition, a protruding portion formed in such a way that the small diameter plug is projected from the silicon substrate is put into an upper face of the large diameter plug. Further, an upper face of the small diameter plug is connected to a first interconnect.
Public/Granted literature
- US20130032930A1 SEMICONDUCTOR DEVICE COMPRISING THROUGH-ELECTRODE INTERCONNECT Public/Granted day:2013-02-07
Information query
IPC分类:
