Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
- Patent Title (中): 半导体器件及半导体器件的制造方法
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Application No.: US13224787Application Date: 2011-09-02
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Publication No.: US08704367B2Publication Date: 2014-04-22
- Inventor: Tatsuo Migita , Hirokazu Ezawa , Soichi Yamashita , Koro Nagamine , Masahiro Miyata , Tatsuo Shiotsuki , Kiyoshi Muranishi
- Applicant: Tatsuo Migita , Hirokazu Ezawa , Soichi Yamashita , Koro Nagamine , Masahiro Miyata , Tatsuo Shiotsuki , Kiyoshi Muranishi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-198379 20100903; JP2010-212184 20100922
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52
Abstract:
According to one embodiment, a semiconductor substrate, a metal film, a surface modifying layer, and a redistribution trace are provided. On the semiconductor substrate, a wire and a pad electrode are formed. The metal film is formed over the semiconductor substrate. The surface modifying layer is formed on a surface layer of the metal film and improves the adhesion with a resist pattern. The redistribution trace is formed on the metal film via the surface modifying layer.
Public/Granted literature
- US20120056320A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2012-03-08
Information query
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