Invention Grant
US08704371B2 Semiconductor device having multiple bump heights and multiple bump diameters
有权
具有多个凸起高度和多个凸起直径的半导体器件
- Patent Title: Semiconductor device having multiple bump heights and multiple bump diameters
- Patent Title (中): 具有多个凸起高度和多个凸起直径的半导体器件
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Application No.: US13543907Application Date: 2012-07-09
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Publication No.: US08704371B2Publication Date: 2014-04-22
- Inventor: Ramlah Binte Abdul Razak
- Applicant: Ramlah Binte Abdul Razak
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Steven A. Shaw; Wade James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L23/498
- IPC: H01L23/498
Abstract:
A semiconductor die includes a first contact stack including a first UBM pad on a first die pad, a second contact stack including a second UBM pad on a second die pad, and a third contact stack including a third UBM pad on a third die pad. The second UBM pad perimeter is shorter than the first UBM pad perimeter, and the third UBM pad perimeter is longer than the second UBM pad perimeter. A first solder bump is on the first UBM pad, a second solder bump is on the second UBM pad, and a third solder bump is on the third UBM pad. The first solder bump, second solder bump and third solder bump all have different sizes.
Public/Granted literature
- US20130087910A1 SEMICONDUCTOR DEVICE HAVING MULTIPLE BUMP HEIGHTS AND MULTIPLE BUMP DIAMETERS Public/Granted day:2013-04-11
Information query
IPC分类:
