Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13428569Application Date: 2012-03-23
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Publication No.: US08704374B2Publication Date: 2014-04-22
- Inventor: Yumi Hayashi
- Applicant: Yumi Hayashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-178468 20110817
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52
Abstract:
According to one embodiment, a semiconductor device includes a first insulating layer provided in a first area and in a second area, a line-and-space-like second insulating layer formed on the first insulating layer provided in the first area, and a third insulating layer formed on the first insulating layer provided in the second area and which is substantially identical to the second insulating layer in height.
Public/Granted literature
- US20130043604A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-02-21
Information query
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