Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12962809Application Date: 2010-12-08
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Publication No.: US08704410B2Publication Date: 2014-04-22
- Inventor: Koichi Nakayama , Tetsuyoshi Shiota , Kenichi Kawasaki
- Applicant: Koichi Nakayama , Tetsuyoshi Shiota , Kenichi Kawasaki
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2009-279726 20091209
- Main IPC: H01H47/00
- IPC: H01H47/00

Abstract:
A semiconductor device includes: a first power line to supply a first voltage to a plurality of internal circuits; a second power line to supply the first voltage to the plurality of internal circuits; a first switch provided between said first power line and each of the plurality of internal circuits; a second switch provided between said second power line and each of the plurality of internal circuits; and a control circuit to control the first switch of a second internal circuit included in the plurality of the internal circuits based on the amounts of noise and voltage drop at power-on in a first circuit included in the plurality of internal circuits.
Public/Granted literature
- US20110304380A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-12-15
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