Invention Grant
US08705238B2 External storage device and method of manufacturing external storage device
有权
外部存储设备和外部存储设备的制造方法
- Patent Title: External storage device and method of manufacturing external storage device
- Patent Title (中): 外部存储设备和外部存储设备的制造方法
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Application No.: US12926710Application Date: 2010-12-06
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Publication No.: US08705238B2Publication Date: 2014-04-22
- Inventor: Yasutaka Nakashiba , Kenta Ogawa
- Applicant: Yasutaka Nakashiba , Kenta Ogawa
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-284348 20091215
- Main IPC: H05K7/20
- IPC: H05K7/20 ; H01L23/48 ; H01F7/06

Abstract:
A storage element is provided in a semiconductor chip, and an inductor and a driver circuit are provided in another semiconductor chip. An external terminal is a contact type terminal, and at least some external terminals are a power supply terminal and a ground terminal. A sealing resin layer is formed over a first surface of an interconnect substrate and seals the semiconductor chips but does not cover the external terminal. The inductor is formed at a surface of the semiconductor chip not facing the interconnect substrate.
Public/Granted literature
- US20110141681A1 External storage device and method of manufacturing external storage device Public/Granted day:2011-06-16
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