Invention Grant
US08705293B2 Compact sense amplifier for non-volatile memory suitable for quick pass write
有权
适用于快速写入的非易失性存储器的紧凑型读出放大器
- Patent Title: Compact sense amplifier for non-volatile memory suitable for quick pass write
- Patent Title (中): 适用于快速写入的非易失性存储器的紧凑型读出放大器
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Application No.: US13277966Application Date: 2011-10-20
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Publication No.: US08705293B2Publication Date: 2014-04-22
- Inventor: Min She , Yan Li , Kwang-Ho Kim , Siu Lung Chan
- Applicant: Min She , Yan Li , Kwang-Ho Kim , Siu Lung Chan
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A compact and versatile sense amp is presented. Among its other features this sense amp arrangement provides a way to pre-charge bit lines while doing data scanning. Another feature is that the sense amp circuit can provide a way to set three different bit line levels used in the quick pass write (QPW) technique using dynamic latch, where quick pass write is a technique where cells along a given word line selected for programming can be enabled, inhibited, or partially inhibited for programming. Also, it can provide a convenient way to measure the cell current.
Public/Granted literature
- US20130100740A1 Compact Sense Amplifier for Non-Volatile Memory Suitable for Quick Pass Write Public/Granted day:2013-04-25
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