Invention Grant
US08705306B2 Method for using a bit specific reference level to read a phase change memory
有权
使用位特定参考电平读取相变存储器的方法
- Patent Title: Method for using a bit specific reference level to read a phase change memory
- Patent Title (中): 使用位特定参考电平读取相变存储器的方法
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Application No.: US13555346Application Date: 2012-07-23
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Publication No.: US08705306B2Publication Date: 2014-04-22
- Inventor: Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
- Applicant: Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
- Applicant Address: US MI Sterling Heights
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Sterling Heights
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: G11C7/14
- IPC: G11C7/14
Abstract:
A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
Public/Granted literature
- US20120287698A1 Using a Bit Specific Reference Level to Read a Memory Public/Granted day:2012-11-15
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