Invention Grant
- Patent Title: DDR PSRAM and data writing and reading methods thereof
- Patent Title (中): DDR PSRAM及其数据写入和读取方法
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Application No.: US14054249Application Date: 2013-10-15
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Publication No.: US08705313B2Publication Date: 2014-04-22
- Inventor: Chih-Hsin Lin , Tsung-Huang Chen , Bing-Shiun Wang , Jen-Pin Su
- Applicant: MediaTek Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: Mediatek Inc.
- Current Assignee: Mediatek Inc.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C8/16
- IPC: G11C8/16

Abstract:
A double data rate pseudo SRAM (DDR PSRAM) is provided. The DDR PSRAM includes a data receiver, a memory and an address decoder. The data receiver receives a first single data rate data from a controller via a common bus according to a clock. The address decoder decodes the first single data rate data to obtain an address of the memory. The data receiver stores the double data rate data into the address of the memory. The DDR PSRAM also includes a data transmitter and a data strobe generating unit. The data transmitter obtains data stored in the address of the memory and provides a double data rate data to the controller according to the obtained data, and the data strobe generating unit a data strobe signal to the controller and toggling the data strobe signal in response to the double data rate data.
Public/Granted literature
- US20140043925A1 DDR PSRAM AND DATA WRITING AND READING METHODS THEREOF Public/Granted day:2014-02-13
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