Invention Grant
- Patent Title: Method of inserting dummy patterns
- Patent Title (中): 插入虚拟图案的方法
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Application No.: US13650192Application Date: 2012-10-12
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Publication No.: US08707237B2Publication Date: 2014-04-22
- Inventor: Fucheng Chen
- Applicant: Shanghai Hua Hong NEC Electronics Co., Ltd
- Applicant Address: CN Shanghai
- Assignee: Shanghai Hua Hong Nec Electronics Co., Ltd.
- Current Assignee: Shanghai Hua Hong Nec Electronics Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: MKG, LLC
- Priority: CN201110312357 20111014
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method of inserting dummy patterns is provided. The method includes: determining an applicable area in which dummy patterns shall be inserted and an inapplicable area in which dummy patterns shall not be inserted on a chip; and inserting dummy patterns starting from one side of the inapplicable area and arranging the inserted dummy patterns into circles. The method of the present invention ensures that dummy patters are preferentially inserted around the device that requires protection by dummy patterns, so that good uniformity of chip pattern densities is guaranteed and within-wafer uniformity is improved, thus improving the yield and performance of semiconductor devices.
Public/Granted literature
- US20130097570A1 METHOD OF INSERTING DUMMY PATTERNS Public/Granted day:2013-04-18
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