Methods for patterning material layers, which may be implemented in forming integrated circuit device features, are disclosed. In an example, a method includes forming a first resist layer over a material layer; forming a second resist layer over the first resist layer; forming an opening that extends through the second resist layer and the first resist layer to expose the material layer, wherein the opening has a substantially constant width in the second resist layer and a tapered width in the first resist layer; and performing a tilt-angle deposition process to form a feature over the exposed material layer.