Invention Grant
- Patent Title: Method for forming contact hole
- Patent Title (中): 形成接触孔的方法
-
Application No.: US13364252Application Date: 2012-02-01
-
Publication No.: US08709946B2Publication Date: 2014-04-29
- Inventor: Meng-Feng Tsai , Yi-Shiang Chang , Chia-Chi Lin , I-Hsin Chen , Chia-Ming Wu
- Applicant: Meng-Feng Tsai , Yi-Shiang Chang , Chia-Chi Lin , I-Hsin Chen , Chia-Ming Wu
- Applicant Address: TW Hsinchu
- Assignee: Powerchip Technology Corporation
- Current Assignee: Powerchip Technology Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW100143036A 20111124
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for forming contact holes includes following steps. A substrate including a dense region and an isolation region is provided. A material layer is formed on the substrate. Sacrificed patterns are formed on the material layer in the dense region, wherein there is a first opening between the two adjacent sacrificed patterns. A spacer is formed on each of two sides of each of the sacrificed patterns, wherein the spacers are separated from each other. The sacrificed patterns are removed to form a second opening between two adjacent spacers. A planar layer is formed to fill up the second openings. A first slit is formed in the planar layer, wherein the first slit exposes a portion of the material layer under the second openings. The portion of the material layer exposed by the first slit is removed to form third openings in the material layer.
Public/Granted literature
- US20130137270A1 METHOD FOR FORMING CONTACT HOLE Public/Granted day:2013-05-30
Information query
IPC分类:
