A solid-state imaging device includes a semiconductor substrate having a plurality of light-receiving portions (PD) formed therein, a wiring layer formed on the semiconductor substrate, color filters formed on the wiring layer in a manner individually corresponding to the light-receiving portions (PD) of the semiconductor substrate, and partition walls each formed between the individual color filters. Each of the partition walls includes a lower layer portion and an upper layer portion, an upper surface of the lower layer portion is modified into a modified layer, and an interface for facilitating reflection of penetration light from outside is structured between the modified layer and the upper layer portion.