Invention Grant
- Patent Title: Single check memory devices and methods
- Patent Title (中): 单一检查存储器件和方法
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Application No.: US12975494Application Date: 2010-12-22
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Publication No.: US08711616B2Publication Date: 2014-04-29
- Inventor: Vishal Sarin , Aaron Yip , Tomoharu Tanaka
- Applicant: Vishal Sarin , Aaron Yip , Tomoharu Tanaka
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Memory devices and methods of operating memory devices are shown. Configurations described include circuits to perform a single check between programming pulses to determine a threshold voltage with respect to desired benchmark voltages. In one example, the benchmark voltages are used to change a programming speed of selected memory cells.
Public/Granted literature
- US20120163076A1 SINGLE CHECK MEMORY DEVICES AND METHODS Public/Granted day:2012-06-28
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