Invention Grant
US08713291B2 Cache memory control device, semiconductor integrated circuit, and cache memory control method 失效
高速缓存存储控制装置,半导体集成电路和缓存存储器控制方法

  • Patent Title: Cache memory control device, semiconductor integrated circuit, and cache memory control method
  • Patent Title (中): 高速缓存存储控制装置,半导体集成电路和缓存存储器控制方法
  • Application No.: US12926455
    Application Date: 2010-11-18
  • Publication No.: US08713291B2
    Publication Date: 2014-04-29
  • Inventor: Naoya Ishimura
  • Applicant: Naoya Ishimura
  • Applicant Address: JP Kawasaki
  • Assignee: Fujitsu Limited
  • Current Assignee: Fujitsu Limited
  • Current Assignee Address: JP Kawasaki
  • Agency: Staas & Halsey LLP
  • Priority: JP2009-267990 20091125
  • Main IPC: G06F9/00
  • IPC: G06F9/00 G06F13/00
Cache memory control device, semiconductor integrated circuit, and cache memory control method
Abstract:
A cache memory control device includes cache memories shared by arithmetic processing units, buses shared by the arithmetic processing units to transfer data, an instruction execution unit that accesses the cache memories to execute an access instruction from the arithmetic processing unit, and transfers data from the cache memory to the bus, an instruction feeding unit that feeds the access instruction to the instruction execution unit while inhibiting feeding of a subsequent access instruction for the cache memory accessed in the preceding access instruction in an execution period of the preceding access instruction and inhibiting feeding of a subsequent access instruction using the same bus as the preceding access instruction in a predetermined period, and a timing control unit that, depending on the type of the subsequent access instruction, controls the instruction executing unit to delay the transfer of the data from the cache memory to the bus.
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