Invention Grant
US08713407B2 Semiconductor memory system having ECC circuit and controlling method thereof
有权
具有ECC电路的半导体存储器系统及其控制方法
- Patent Title: Semiconductor memory system having ECC circuit and controlling method thereof
- Patent Title (中): 具有ECC电路的半导体存储器系统及其控制方法
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Application No.: US12647333Application Date: 2009-12-24
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Publication No.: US08713407B2Publication Date: 2014-04-29
- Inventor: Jun Rye Rho
- Applicant: Jun Rye Rho
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2009-0069606 20090729
- Main IPC: G06F11/00
- IPC: G06F11/00
Abstract:
A semiconductor memory system includes a memory area and an error-correcting (ECC) circuit. The memory area includes a plurality of cells, and the ECC circuit is configured to determine whether uncorrectable error data exists or not by using a parity according to cell data of the memory area in a read mode and a parity according to an encoding result of corrected data of the cell data.
Public/Granted literature
- US20110029841A1 SEMICONDUCTOR MEMORY SYSTEM HAVING ECC CIRCUIT AND CONTROLLING METHOD THEREOF Public/Granted day:2011-02-03
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