Invention Grant
- Patent Title: Capacitance pressure sensor
- Patent Title (中): 电容式压力传感器
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Application No.: US13191397Application Date: 2011-07-26
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Publication No.: US08714022B2Publication Date: 2014-05-06
- Inventor: Qiang Peng
- Applicant: Qiang Peng
- Applicant Address: JP Kanagawa
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2010-172113 20100730; JP2011-135996 20110620
- Main IPC: G01L9/12
- IPC: G01L9/12

Abstract:
The present invention provides a capacitance pressure sensor having a traces structure which can stably measure a pressure. A capacitance pressure sensor according to an embodiment of the present invention includes: a substrate having a first insulation layer to a third insulation layer; a diaphragm placed to face the substrate so that a reference chamber is formed between the diaphragm and the substrate; a first electrode on the substrate 1, facing to the diaphragm; a second electrode on the diaphragm, which is disposed so as to face the first electrode; a trace connected to the first electrode, for electrically connecting the first electrode to the outside; and a second trace connected to the second electrode, for electrically connecting the second electrode to the outside. The traces penetrate the first insulation layer from the reference chamber side of the substrate toward the side opposing to the reference chamber of the substrate, and also are bent between each of the insulation layers.
Public/Granted literature
- US20120024075A1 CAPACITANCE PRESSURE SENSOR Public/Granted day:2012-02-02
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