Invention Grant
- Patent Title: Lid for use in ion beam assisted deposition
- Patent Title (中): 用于离子束辅助沉积
-
Application No.: US13420552Application Date: 2012-03-14
-
Publication No.: US08714392B2Publication Date: 2014-05-06
- Inventor: Shao-Kai Pei
- Applicant: Shao-Kai Pei
- Applicant Address: TW New Taipei
- Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: TW11101304A 20120112
- Main IPC: B65D51/00
- IPC: B65D51/00 ; B65D25/28 ; B65D6/40

Abstract:
A lid includes a first surface defining a cavity, a first joint defining an inlet, a second joint defining an outlet, a center hole communicating with the inlet, a circular channel communicating with the outlet and extending along a periphery of the first surface, and a number of branch channels radially extending from the center hole to the circular channel. The first surface includes a screen plate retained within the cavity, capable of letting the side-effect particles adhere thereon. Each of the plurality of branch channels communicates with the center hole and the circular channel, allowing liquid of a predetermined temperature to circulate within the lid.
Public/Granted literature
- US20130180987A1 LID FOR USE IN ION BEAM ASSISTED DEPOSITION Public/Granted day:2013-07-18
Information query