Invention Grant
US08715414B2 Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer
有权
Si（1-v-w-x）CwAlxNv基材的制造方法，外延晶片的制造方法，Si（1-v-w-x）CwAlxNv母材，外延片
- Patent Title: Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer
- Patent Title (中): Si（1-v-w-x）CwAlxNv基材的制造方法，外延晶片的制造方法，Si（1-v-w-x）CwAlxNv母材，外延片
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Application No.: US12989036Application Date: 2009-04-17
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Publication No.: US08715414B2Publication Date: 2014-05-06
- Inventor: Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
- Applicant: Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2008-114466 20080424; JP2009-056914 20090310
- International Application: PCT/JP2009/057722 WO 20090417
- International Announcement: WO2009/131063 WO 20091029
- Main IPC: C30B29/38
- IPC: C30B29/38
Abstract:
There are provided a Si(1-v-w-x)CwAlxNv substrate that achieves high crystallinity and low costs, an epitaxial wafer, and manufacturing methods thereof.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate according to the present invention includes the steps of preparing a different type of substrate 11 and growing a Si(1-v-w-x)CwAlxNv layer having a main surface on the different type of substrate 11. The component ratio x+v at the main surface of the Si(1-v-w-x)CwAlxNv layer is 0
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