Invention Grant
US08715416B2 Doping apparatus for simultaneously injecting two dopants into a semiconductor melt at different positions and method for manufacturing silicon single crystal using the doping apparatus 有权
用于在不同位置同时将两种掺杂剂注入到半导体熔体中的掺杂装置和使用掺杂装置制造单晶硅的方法

Doping apparatus for simultaneously injecting two dopants into a semiconductor melt at different positions and method for manufacturing silicon single crystal using the doping apparatus
Abstract:
A doping device includes a first dopant accommodating portion including an opening on an upper portion to accommodate a first dopant that is evaporated near a surface of a semiconductor melt; a second dopant accommodating portion including a dopant holder that holds a second dopant that is liquefied near the surface of the semiconductor melt while including a communicating hole for delivering the liquefied dopant downwardly, and a conduit tube provided on a lower portion of the dopant holder for delivering the liquefied dopant flowed from the communicating hole to the surface of the semiconductor melt; and a guide provided by a cylinder body of which a lower end is opened and an upper end is closed for guiding dopant gas generated by evaporation of the first dopant to the surface of the semiconductor melt.
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