Invention Grant
- Patent Title: Doping apparatus for simultaneously injecting two dopants into a semiconductor melt at different positions and method for manufacturing silicon single crystal using the doping apparatus
- Patent Title (中): 用于在不同位置同时将两种掺杂剂注入到半导体熔体中的掺杂装置和使用掺杂装置制造单晶硅的方法
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Application No.: US12524331Application Date: 2008-05-23
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Publication No.: US08715416B2Publication Date: 2014-05-06
- Inventor: Yasuhito Narushima , Shinichi Kawazoe , Fukuo Ogawa , Toshimichi Kubota
- Applicant: Yasuhito Narushima , Shinichi Kawazoe , Fukuo Ogawa , Toshimichi Kubota
- Applicant Address: JP Nagasaki
- Assignee: Sumco Techxiv Corporation
- Current Assignee: Sumco Techxiv Corporation
- Current Assignee Address: JP Nagasaki
- Agency: Holtz, Holtz, Goodman and Chick, PC
- Priority: JP2007-146081 20070531
- International Application: PCT/JP2008/059509 WO 20080523
- International Announcement: WO2008/149687 WO 20081211
- Main IPC: C30B15/04
- IPC: C30B15/04

Abstract:
A doping device includes a first dopant accommodating portion including an opening on an upper portion to accommodate a first dopant that is evaporated near a surface of a semiconductor melt; a second dopant accommodating portion including a dopant holder that holds a second dopant that is liquefied near the surface of the semiconductor melt while including a communicating hole for delivering the liquefied dopant downwardly, and a conduit tube provided on a lower portion of the dopant holder for delivering the liquefied dopant flowed from the communicating hole to the surface of the semiconductor melt; and a guide provided by a cylinder body of which a lower end is opened and an upper end is closed for guiding dopant gas generated by evaporation of the first dopant to the surface of the semiconductor melt.
Public/Granted literature
- US20100031871A1 DOPING APPARATUS AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL Public/Granted day:2010-02-11
Information query
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