Invention Grant
- Patent Title: Magnetron sputter cathode
- Patent Title (中): 磁控溅射阴极
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Application No.: US11284439Application Date: 2005-11-21
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Publication No.: US08715471B2Publication Date: 2014-05-06
- Inventor: Jörg Krempel-Hesse , Andreas Jischke , Uwe Schüssler , Hans Wolf
- Applicant: Jörg Krempel-Hesse , Andreas Jischke , Uwe Schüssler , Hans Wolf
- Applicant Address: DE Alzenau
- Assignee: Applied Materials GmbH & Co KG
- Current Assignee: Applied Materials GmbH & Co KG
- Current Assignee Address: DE Alzenau
- Agency: Fulbright & Jaworski LLP
- Main IPC: C23C14/35
- IPC: C23C14/35

Abstract:
To be able to realize a relatively wide magnetron sputter cathode, it is proposed that on the vacuum side of a carrier (2) is disposed the sputter target (4) with a backing plate (3), which maintains a gap (14) from the carrier (2). The backing plate (3) is developed as a cooling plate. In it are located cooling means channels (15), which, via an inlet (16) through the carrier (2), are supplied with cooling fluid, which can flow out again via an outlet (17) through the carrier (2). On the atmospheric side is located a magnet configuration (5).
Public/Granted literature
- US20060118412A1 Magnetron sputter cathode Public/Granted day:2006-06-08
Information query
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