Invention Grant
US08715532B2 Reduced graphene oxide doped with dopant, thin layer and transparent electrode
有权
掺杂有掺杂剂，薄层和透明电极的氧化还原石墨烯
- Patent Title: Reduced graphene oxide doped with dopant, thin layer and transparent electrode
- Patent Title (中): 掺杂有掺杂剂，薄层和透明电极的氧化还原石墨烯
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Application No.: US12171551Application Date: 2008-07-11
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Publication No.: US08715532B2Publication Date: 2014-05-06
- Inventor: Hyeon-jin Shin , Jae-young Choi , Seon-mi Yoon
- Applicant: Hyeon-jin Shin , Jae-young Choi , Seon-mi Yoon
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2007-0126947 20071207
- Main IPC: H01B1/00
- IPC: H01B1/00 ; H01B1/04 ; B82Y40/00 ; C01B31/02 ; C01B31/08
Abstract:
Disclosed herein is a reduced graphene oxide doped with a dopant, and a thin layer, a transparent electrode, a display device and a solar cell including the reduced graphene oxide. The reduced graphene oxide doped with a dopant includes an organic dopant and/or an inorganic dopant.
Public/Granted literature
- US20090146111A1 REDUCED GRAPHENE OXIDE DOPED WITH DOPANT, THIN LAYER AND TRANSPARENT ELECTRODE Public/Granted day:2009-06-11
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