Invention Grant
- Patent Title: Production of polycrystalline silicon in substantially closed-loop systems that involve disproportionation operations
- Patent Title (中): 在涉及歧化作业的基本闭环系统中生产多晶硅
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Application No.: US13328030Application Date: 2011-12-16
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Publication No.: US08715597B2Publication Date: 2014-05-06
- Inventor: Puneet Gupta , Yue Huang , Satish Bhusarapu
- Applicant: Puneet Gupta , Yue Huang , Satish Bhusarapu
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: B01J8/04
- IPC: B01J8/04 ; B01J8/00 ; B01J8/02 ; B01J19/00 ; B01J8/18 ; F27B15/00 ; C01B33/00 ; C01B33/02 ; C01B33/04 ; C01B33/06
Abstract:
Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.
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