Invention Grant
US08715789B2 Chemical vapor deposition for an interior of a hollow article with high aspect ratio
有权
用于具有高纵横比的中空制品内部的化学气相沉积
- Patent Title: Chemical vapor deposition for an interior of a hollow article with high aspect ratio
- Patent Title (中): 用于具有高纵横比的中空制品内部的化学气相沉积
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Application No.: US12970183Application Date: 2010-12-16
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Publication No.: US08715789B2Publication Date: 2014-05-06
- Inventor: Deepak Upadhyaya , Karthik Boinapally , William J. Boardman , Matthew MaMoody , Thomas B. Casserly , Pankaj Jyoti Hazarika , Duc Doan
- Applicant: Deepak Upadhyaya , Karthik Boinapally , William J. Boardman , Matthew MaMoody , Thomas B. Casserly , Pankaj Jyoti Hazarika , Duc Doan
- Applicant Address: US CA Pleasanton
- Assignee: Sub-One Technology, Inc.
- Current Assignee: Sub-One Technology, Inc.
- Current Assignee Address: US CA Pleasanton
- Agency: Law Offices of Thomas Schneck
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/04 ; C23C16/503 ; C23C16/26 ; H01J37/32

Abstract:
A method and apparatus for plasma enhanced chemical vapor deposition to an interior region of a hollow, tubular, high aspect ratio workpiece are disclosed. A plurality of anodes are disposed in axially spaced apart arrangement, to the interior of the workpiece. A process gas is introduced into the region. A respective individualized DC or pulsed DC bias is applied to each of the anodes. The bias excites the process gas into a plasma. The workpiece is biased in a hollow cathode arrangement. Pressure is controlled in the interior region to maintain the plasma. An elongated support tube arranges the anodes, and receives a process gas tube. A current splitter provides a respective selected proportion of a total current to each anode. One or more notch diffusers or chamber diffusers may diffuse the process gas or a plasma moderating gas. Plasma impedance and distribution may be controlled using various means.
Public/Granted literature
- US20110151141A1 CHEMICAL VAPOR DEPOSITION FOR AN INTERIOR OF A HOLLOW ARTICLE WITH HIGH ASPECT RATIO Public/Granted day:2011-06-23
Information query
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