Invention Grant
- Patent Title: Method for forming porous insulating film and semiconductor device
- Patent Title (中): 多孔绝缘膜形成方法及半导体装置
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Application No.: US11991745Application Date: 2006-09-08
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Publication No.: US08715791B2Publication Date: 2014-05-06
- Inventor: Munehiro Tada , Naoya Furutake , Tsuneo Takeuchi , Yoshihiro Hayashi
- Applicant: Munehiro Tada , Naoya Furutake , Tsuneo Takeuchi , Yoshihiro Hayashi
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2005-264619 20050913
- International Application: PCT/JP2006/317819 WO 20060908
- International Announcement: WO2007/032261 WO 20070322
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
A method for forming porous insulating film using cyclic siloxane raw material monomer, includes forming porous insulating film using the mixed gas of a cyclic organosiloxane raw material and a compound raw material including a part of chemical structure including the cyclic organosiloxane raw material. The compound raw material may include a compound including a part of side chain of the cyclic organosiloxane raw material.
Public/Granted literature
- US20100219512A1 Method for Forming Porous Insulating Film and Semiconductor Device Public/Granted day:2010-09-02
Information query
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