Invention Grant
- Patent Title: Vanadium oxide thin film pattern and method of fabricating the same
- Patent Title (中): 氧化钒薄膜图案及其制造方法
-
Application No.: US12677633Application Date: 2008-09-10
-
Publication No.: US08715811B2Publication Date: 2014-05-06
- Inventor: Yoshitake Masuda , Kunihito Koumoto
- Applicant: Yoshitake Masuda , Kunihito Koumoto
- Applicant Address: JP Tokyo
- Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Agent Suzannah K. Sundby, Esq.
- Priority: JP2007-236341 20070912
- International Application: PCT/JP2008/066352 WO 20080910
- International Announcement: WO2009/035007 WO 20090319
- Main IPC: B32B3/00
- IPC: B32B3/00 ; B05D5/00
Abstract:
The present invention relates to a vanadium oxide thin film pattern which is fabricated by using APTS (3-aminopropyltriethoxysilane, H2NC3H5Si(OCH3)3) or the like to prepare an APTS-SAM or the like on the surface of a substrate, irradiating this APTS-SAM with vacuum ultraviolet light through a photomask to thereby modify amino-terminal silanes into silanol groups in the exposed area, and then depositing vanadium oxide in a liquid phase using a patterned self-assembled monolayer having the amino-terminated silane surface and silanol group surface as a template for patterning the vanadium oxide, to a method of fabricating the same, and to a vanadium oxide device.
Public/Granted literature
- US20100183854A1 Vanadium Oxide Thin Film Pattern and Method of Fabricating the Same Public/Granted day:2010-07-22
Information query
