Invention Grant
- Patent Title: Control over hydrogen fluoride levels in oxide etchant
- Patent Title (中): 控制氧化物腐蚀剂中的氟化氢水平
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Application No.: US13731296Application Date: 2012-12-31
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Publication No.: US08716028B2Publication Date: 2014-05-06
- Inventor: Amy Tseng , Brian V. Jenkins , Robert M. Mack
- Applicant: Amy Tseng , Brian V. Jenkins , Robert M. Mack
- Applicant Address: US IL Naperville
- Assignee: Nalco Company
- Current Assignee: Nalco Company
- Current Assignee Address: US IL Naperville
- Agent Benjamin E. Carlsen
- Main IPC: G01N21/75
- IPC: G01N21/75

Abstract:
The invention is directed towards methods and compositions for identifying the amount of hydrofluoric acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of hydrofluoric acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of hydrofluoric acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the hydrofluoric acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.
Public/Granted literature
- US20130183773A1 CONTROL OVER HYDROGEN FLUORIDE LEVELS IN OXIDE ETCHANT Public/Granted day:2013-07-18
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