Invention Grant
US08716044B2 Optical semiconductor device having ridge structure formed on active layer containing P-type region and its manufacture method
有权
具有形成在含有P型区域的有源层上的脊结构的光半导体装置及其制造方法
- Patent Title: Optical semiconductor device having ridge structure formed on active layer containing P-type region and its manufacture method
- Patent Title (中): 具有形成在含有P型区域的有源层上的脊结构的光半导体装置及其制造方法
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Application No.: US14027243Application Date: 2013-09-16
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Publication No.: US08716044B2Publication Date: 2014-05-06
- Inventor: Tsuyoshi Yamamoto , Hisao Sudo
- Applicant: Fujitsu Limited
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2006-263074 20060927
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A p-type cladding layer (3) of p-type semiconductor is formed over a substrate. An active layer (5) including a p-type semiconductor region is disposed over the p-type cladding layer. A buffer layer (10) of non-doped semiconductor is disposed over the active layer. A ridge-shaped n-type cladding layer (11) of n-type semiconductor is disposed over a partial surface of the buffer layer. The buffer layer on both sides of the ridge-shaped n-type cladding layer is thinner than the buffer layer just under the ridge-shaped n-type cladding layer.
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