Invention Grant
US08716049B2 Growth of group III-V material layers by spatially confined epitaxy
有权
通过空间限制外延生长III-V族材料层
- Patent Title: Growth of group III-V material layers by spatially confined epitaxy
- Patent Title (中): 通过空间限制外延生长III-V族材料层
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Application No.: US13025971Application Date: 2011-02-11
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Publication No.: US08716049B2Publication Date: 2014-05-06
- Inventor: Jie Su , Olga Kryliouk
- Applicant: Jie Su , Olga Kryliouk
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L33/02
Abstract:
Techniques for crack-free growth of GaN, and related, films on larger-size substrates via spatially confined epitaxy are described.
Public/Granted literature
- US20110204378A1 GROWTH OF GROUP III-V MATERIAL LAYERS BY SPATIALLY CONFINED EPITAXY Public/Granted day:2011-08-25
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